The is a high-performance Silicon N-Channel Dual Gate MOSFET typically used in high-frequency (RF) and microwave applications. It is manufactured by companies including NEC, Hitachi, and Motorola and is often housed in a CAN-4 (similar to TO-72) metal package. Key Features & Applications:
By shifting the AGC bias voltage on Gate 2, engineers can dynamically control the amplifier's gain across a wide dynamic range without shifting the input impedance of Gate 1. This keeps the receiver's tuned circuits from detuning as the signal strength fluctuates.
The 3SK41 is a low‑power, high‑frequency device with modest DC ratings. The following absolute maximum ratings and electrical characteristics are compiled from the available technical summaries of the component. 3sk41 datasheet
Gate 1 receives the incoming RF signal while Gate 2 is driven by a local oscillator (LO), providing highly isolated frequency conversion.
Tied to the source terminal and often grounded alongside the metal casing to minimize parasitic capacitance. The is a high-performance Silicon N-Channel Dual Gate
: In many circuits, it can be part of a broader series of "3SK" transistors (like the 3SK35 or 3SK40) depending on the specific voltage and gain requirements of your project. Jotrin Electronics Are you looking to use this for a new RF design 3SK41 - NEC/HITACHI/MOTOROLA - Jotrin
If you are working on a specific device restoration or circuit design, please let me know: This keeps the receiver's tuned circuits from detuning
The is a technical blueprint for a classic N-channel dual-gate MOSFET , a component primarily known for its role in high-frequency applications like RF amplifiers and mixers. Key Specifications & Features
The 3SK41 is known for its linear transfer characteristics. This reduces the likelihood of "intermodulation distortion," ensuring that strong nearby signals do not drown out the weak signal you are trying to receive. 📐 Pinout and Package Information